Photoluminescence of CdSe quantum dots grown on tilted ZnSe/GaAs (100)
β Scribed by Masakazu Ohishi; Minoru Yoneta; Kazuyuki Takeuchi; Yukihiro Kajihara; Hiroshi Saito
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 192 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1862-6351
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
CdSe/ZnSe quantum structures grown on GaAs(001) by molecular beam epitaxy (MBE) were investigated by temperature dependent, time-resolved photoluminescence spectroscopy. A strong influence of the conditions during cap layer growth on the optical properties was found. Using conventional MBE excitons
Employing two different growth methods: standard molecular beam epitaxy (MBE) and lowtemperature atomic layer epitaxy (ALE) with subsequent annealing, we have obtained highquality quantum dot structures consisting of CdSe embedded in ZnSe. Single dot emission lines are observed in micro-luminescence