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The influence of the substrate on interface properties of homoepitaxial silicon layers

✍ Scribed by G. Kósza; H. Rausch; T. Kormány

Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
207 KB
Volume
12
Category
Article
ISSN
0040-6090

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## Abstract GaP LEC substrates doped with sulphur (__N__~D~ – __N__~A~ roughly (3–7) × 10^17^ cm^−3^) were characterized by transmission electron microscopy. This material was found to contain microdefects such as perfect perismatic dislocation loops, and spherical precipitates. Cross‐sectional TEM