Microstructure evolution of hydrogen-imp
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Jing Wang; Qinghua Xiao; Hailing Tu; Beiling Shao; Ansheng Liu
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Article
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2003
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Elsevier Science
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English
β 795 KB
The microstructure evolution of a hydrogen-implanted Si(111) wafer during annealing was studied using transmission electron microscopy (TEM). In the damaged layer caused by hydrogen implantation before annealing, most defects are platelet-like and are located on (111) planes. A few amorphous clumps