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The influence of strain and dislocations on transport properties of GaAs/Si strained-layer heterojunctions

✍ Scribed by Mao, Er-Wang ;Zhao, Wen-Qin ;Zhang, Hong-Rui ;Li, Ai-Zhen ;Chen, Jian-Min ;Fang, Guo-Ping

No coin nor oath required. For personal study only.

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