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Influence of the method of preparation on the structure and properties of Ge-GaAs heterojunctions

โœ Scribed by A.L. Aseev; Yu.N. Pogorelov; S.I. Stenin; V.N. Shumsky

Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
407 KB
Volume
32
Category
Article
ISSN
0040-6090

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โœ Josรฉ Ribeiro Filho; Gil A. Farias; Valder N. Freire ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 302 KB

The influence of growth patterns in the transmission properties of nonabrupt GaAs/ Al V Ga \V As heterojunctions is investigated. Five interfacial growth patterns, representative of interfacial alloy variations generated by different growth techniques, are used. It is shown that carrier transmission