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The conduction properties of GeGaAs1−xPxn−n heterojunctions

✍ Scribed by L.L. Chang


Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
709 KB
Volume
8
Category
Article
ISSN
0038-1101

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✍ José Ribeiro Filho; Gil A. Farias; Valder N. Freire 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 302 KB

The influence of growth patterns in the transmission properties of nonabrupt GaAs/ Al V Ga \V As heterojunctions is investigated. Five interfacial growth patterns, representative of interfacial alloy variations generated by different growth techniques, are used. It is shown that carrier transmission