✦ LIBER ✦

Doping dependence of the properties of GaAsAlxGa1-xAs single heterostructure luminescent diodes

✍ Scribed by Jochen Heinen

Publisher: Elsevier Science
Year: 1977
Tongue: English
Weight: 164 KB
Volume: 20
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(77)90014-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Observation of oscillatory linewidth in

Observation of oscillatory linewidth in the cyclotron resonance of GaAsAlxGa1−xAs heterostructures

✍ Th. Englert; J.C. Maan; Ch. Uihlein; D.C. Tsui; A.C. Gossard 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 287 KB

Observation of phase-shift locking of th

Observation of phase-shift locking of the Aharonov-Bohm effect in doubly connected GaAsAlxGa1−xAs heterostructure devices

✍ A.M. Chang; K. Owusu-Sekyere; T.Y. Chang 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 348 KB

Optical and electrical properties of the

Optical and electrical properties of the AlxGa1−xAs/GaAs single heterojunctions grown by low pressure MOVPE

✍ F.E.G. Guimar∼aes; I. Gyuro; F. Scheffer; M. Heuken; K. Heime 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 387 KB

EER studies of the single quantum well G

EER studies of the single quantum well GaAs/AlxGa1−xAs electrode/nonaqueous solution interface

✍ Yao Liu; Xu-Rui Xiao; Ruo-Zhen Wang; Dong-Lin Li; Yi-Ping Zeng; Chun-Hui Yang; D 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 333 KB

The interfacial behavior of the single quantum well (SQW) GaAs/AlxGa I \_xAs electrode in HQ/BQ and Fc/Fc + electrolytes was characterized respectively by studying the quantum confined Stark effect and Franz-Keldysh oscillation with electrolyte electroreflectance spectroscopy. The interaction of the

The influence of interfacial growth patt

The influence of interfacial growth patterns on the transmission properties of carriers through nonabrupt GaAs/AlxGa1-xAs single barriers

✍ M.C.A. Lima; J.M.Pereira Junior; G.A. Farias; V.N. Freire 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 167 KB

The influence of growth patterns on the

The influence of growth patterns on the transmission properties of nonabrupt GaAs/AlxGa1−xAs heterojunctions

✍ José Ribeiro Filho; Gil A. Farias; Valder N. Freire 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 302 KB

The influence of growth patterns in the transmission properties of nonabrupt GaAs/ Al V Ga \V As heterojunctions is investigated. Five interfacial growth patterns, representative of interfacial alloy variations generated by different growth techniques, are used. It is shown that carrier transmission