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The influence of process-induced defects in the silicon on the surface charge in MOS structures

✍ Scribed by L. Toncheva; P. Peykov; B. Marinov

Publisher: Elsevier Science
Year: 1978
Tongue: English
Weight: 155 KB
Volume: 50
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(78)90127-x

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