The influence of the silicon and oxide layer surface treatment on the effective defect charge density in a MOS structure : O. Csabay and H. Frank. Elektrotechnický časopis 24, (4) 228 (1973). (In Czechoslovakian)

• Publisher: Elsevier Science
• Year: 1974
• Tongue: English
• Weight: 126 KB
• Volume: 13
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(74)90076-6