The influence of pressure on the growth ofa-plane GaN onr-plane sapphire substrates by MOCVD
β Scribed by Tao He; Hui Li; LongGui Dai; XiaoLi Wang; Yao Chen; ZiGuang Ma; PeiQiang Xu; Yang Jiang; Lu Wang; HaiQiang Jia; WenXin Wang; Hong Chen
- Book ID
- 107363903
- Publisher
- Science in China Press (SCP)
- Year
- 2011
- Tongue
- English
- Weight
- 511 KB
- Volume
- 54
- Category
- Article
- ISSN
- 1672-1799
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract Nonpolar (11$ \bar 2 $0) __a__ βplane GaN thin films were grown on __r__ βplane (1$ \bar 1 $02) sapphire substrates by lowβpressure metal organic chemical vapor deposition (MOCVD). The stress characteristics of the __a__ βplane GaN films were investigated by means of polarized Raman sca
## Abstract Low defect density __a__ βplane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, __a__ βplane GaN films with atomically flat surface were grown. The threading dislocation and stacking fault densities in the overgrown re
The optimal conditions of p-type activation for nonpolar a-plane (1 1 -2 0) p-type GaN films on r-plane (1 -1 0 2) sapphire substrates with various off-axis orientations have been investigated. Secondary ion mass spectrometry (SIMS) measurements show that Mg doping concentrations of 6.58 Γ 10 19 cm
Herein is a discussion of how the structural and optical properties of m-plane GaN (m-GaN) films are affected by the inclination direction of vicinal m-plane sapphire substrate. The m-GaN films were grown on three different types of substrates inclined toward the a-axis direction, the c-axis directi
## Abstract We report on the optical properties of a series of nonβpolar __a__βplane InGaN/GaN multiple quantum well (QW) structures of constant well width and varying indium concentration. The emission spectrum is dominated by recombination at regions of the QW intersected by basal plane stacking