One-step lateral growth for reduction in defect density ofa-plane GaN onr-sapphire substrate and its application in light emitters
✍ Scribed by Iida, D. ;Miura, A. ;Okadome, Y. ;Tsuchiya, Y. ;Kawashima, T. ;Nagai, T. ;Iwaya, M. ;Kamiyama, S. ;Amano, H. ;Akasaki, I.
- Book ID
- 105364247
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 504 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Low defect density a ‐plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, a ‐plane GaN films with atomically flat surface were grown. The threading dislocation and stacking fault densities in the overgrown regions were lower than 10^6^ cm^−2^ and 10^3^ cm^−1^, respectively. We also fabricated and characterized a ‐plane‐GaN‐based LEDs using SELO technology. The light output power of a blue‐green LED was shown to monotonically increase with decreasing of threading dislocation density. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)