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The influence of phosphorus, arsenic and antimony vapour ambients on the diffusion of zinc into gallium arsenide

✍ Scribed by G. Bösker; H.-G. Hettwer; A. Rucki; N.A. Stolwijk; H. Mehrer; W. Jäger; K. Urban


Book ID
113300656
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
596 KB
Volume
42
Category
Article
ISSN
0254-0584

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The effect of phosphorus background conc
✍ A. Nylandsted Larsen; P.E. Andersen; P. Gaiduk; K. Kyllesbech Larsen 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 415 KB

lhe effect of phosphorus background concentration on the di]]i4sion of tin, arsenic and antimony in silicon has been studied for phosphorus concentrations between about 9x 10 ~' ~ and 5 x 10 :° cm-~, corresponding to 10 <-n/n i <-60. 7he effectiw, difJ'usion coefficients are found to be proportional