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Influence of temperature and of structure of antimony substrate on gallium diffusion into the GaSb semiconductor compound

✍ Scribed by Valentin M Kozlov; Luisa Peraldo Bicelli

Book ID
117619255
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
532 KB
Volume
313
Category
Article
ISSN
0925-8388

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## Abstract ZnO: Al films were prepared using low cost spray pyrolysis technique. The dependence of the physical properties on the substrate temperature was studied. The best films obtained at 500Β°C substrate temperature with preferred [002] orientation. The sheet resistance decreases with increase