## Abstract Transparent Zinc Oxide (ZnO) thin films have been grown on Si (100) and Sapphire (0001) substrates by RF magnetron sputtering for different growth time intervals (10, 30 and 60 min) to study the substrate and thickness effects. All the films have been grown at a substrate temperature of
Influence of substrate temperature on the structure of ZnO:Al thin films
β Scribed by S. M. Rozati; Sh. Akeste
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 103 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
Abstract
ZnO: Al films were prepared using low cost spray pyrolysis technique. The dependence of the physical properties on the substrate temperature was studied. The best films obtained at 500Β°C substrate temperature with preferred [002] orientation. The sheet resistance decreases with increased substrate temperature, and values as low as R~sh~ = 207 Ξ©/cm^2^ are reached for substrate temperature of 500Β°C. The optical transmittance of films increased by increasing the substrate temperature and received to 75% at 500Β°C. (Β© 2007 WILEY βVCH Verlag GmbH & Co. KGaA, Weinheim)
π SIMILAR VOLUMES
Titanium aluminium nitride (Ti 1-x Al x N) films have been deposited on silicon (111) substrate at a N 2 flow rate of 2 sccm and 20 sccm and at a substrate temperature of 773 K and at a N 2 flow rate of 2 sccm and at a substrate temperature of 873 K by reactive DC magnetron sputtering technique. The
## Abstract Thin films of antimony trisulfide (Sb~2~S~3~) were prepared by thermal evaporation under vacuum (p=5Γ10^β5^ torr) on glass substrates maintained at various temperatures between 293 K and 523 K. Their microstructural properties have obtained by transmission electron microscopy (TEM). The
## Abstract Alβdoped ZnO nanoparticle thin films were prepared on glass substrate at the optimum temperature of (410Β±10) Β°C by spray pyrolysis technique using zinc nitrate as a precursor solution and aluminium chloride as a dopant. The dopant concentration (Al/Zn at%) was varied from 0 to 2 at%. St