The influence of N2 flow rate and substrate temperature on Ti1-xAlxN thin films

✍ Scribed by A. Albert Irudayaraj; S. Kalainathan

• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 169 KB
• Volume: 43
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200711122

✦ Synopsis

Titanium aluminium nitride (Ti 1-x Al x N) films have been deposited on silicon (111) substrate at a N 2 flow rate of 2 sccm and 20 sccm and at a substrate temperature of 773 K and at a N 2 flow rate of 2 sccm and at a substrate temperature of 873 K by reactive DC magnetron sputtering technique. The effect of N 2 flow rate and substrate temperature on the grain size and surface roughness of the deposited films have been investigated. The films have been analysed by X-ray diffraction (XRD) and atomic force microscopy (AFM). The films were found to be nanocrystalline. While the grain size of the films decreases with increasing N 2 flow rate and decreases with increasing substrate temperature, the surface roughness of the films decreases with increasing N 2 flow rate and increases with increasing temperature.