𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The influence of mask area ratio on GaN regrowth by epitaxial lateral overgrowth

✍ Scribed by Ching-I Chang; Yen-Lin Lai; Chuan-Pu Liu; Ruey-Chi Wang


Book ID
108191412
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
673 KB
Volume
69
Category
Article
ISSN
0022-3697

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Epitaxial lateral overgrowth of GaN on s
✍ Sang-il Kim; Bumjoon Kim; Samseok Jang; A-young Kim; Jihun Park; Dongjin Byun πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 791 KB

Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography i

Microscopic lateral overgrowth by physic
✍ D. Gogova; M. Albrecht; T. Remmele; K. Irmscher; D. Siche; H.-J. Rost; M. Schmid πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 185 KB

## Abstract Techniques to reduce dislocation densities in GaN grown on foreign substrates are an interesting alternative to bulk growth as long as efficient bulk crystals growth techniques are not available. In this paper a new approach for epitaxial lateral overgrowth (ELO) of GaN through an in‐si