The influence of mask area ratio on GaN regrowth by epitaxial lateral overgrowth
β Scribed by Ching-I Chang; Yen-Lin Lai; Chuan-Pu Liu; Ruey-Chi Wang
- Book ID
- 108191412
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 673 KB
- Volume
- 69
- Category
- Article
- ISSN
- 0022-3697
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π SIMILAR VOLUMES
Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography i
## Abstract Techniques to reduce dislocation densities in GaN grown on foreign substrates are an interesting alternative to bulk growth as long as efficient bulk crystals growth techniques are not available. In this paper a new approach for epitaxial lateral overgrowth (ELO) of GaN through an inβsi