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The impact of postbreakdown gate leakage on MOSFET RF performances

✍ Scribed by L. Pantisano; K. Cheung

Book ID: 126603462
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 49 KB
Volume: 22
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.974585

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