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The impact of oxide degradation on the low frequency (1f) noise behaviour of P channel mosfets

โœ Scribed by Paul K. Hurley; Eoin Sheehan; Stephen Moran; Alan Mathewson

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
339 KB
Volume
36
Category
Article
ISSN
0026-2714

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Impact of probe-to-pad contact degradati
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โœ E. P. Vandamme; D. Schreurs; C. van Dinther ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 141 KB

Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFE