✦ LIBER ✦
Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it
✍ Scribed by E. P. Vandamme; D. Schreurs; C. van Dinther
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 141 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1096-4290
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✦ Synopsis
Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFETs only, are given that enable accurate S-parameter measurements for RF modelling and reliability assessment.