๐”– Bobbio Scriptorium
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The impact of nanoporous SiNxinterlayer growth position on high-quality GaN epitaxial films

โœ Scribed by ZiGuang Ma; ZhiGang Xing; XiaoLi Wang; Yao Chen; PeiQiang Xu; YanXiang Cui; Lu Wang; Yang Jiang; HaiQiang Jia; Hong Chen


Book ID
107372659
Publisher
Springer
Year
2011
Tongue
English
Weight
938 KB
Volume
56
Category
Article
ISSN
1001-6538

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Increasing demand for high brightness LEDs for LCD TV backlighting and solid-state lighting requires MOCVD growth of GaN at high growth rates (4 5 mm/h) with high crystalline quality in mass production reactors. Understanding the MOCVD growth parameters on the quality of GaN materials and growth eff