Selective epitaxial growth (SEG) of silicon opens new avenues in electronic device design by allowing vertical (three dimensional) integrated circuits to be fabricated and isolation between devices to be vastly improved. In this work selective epitaxial silicon deposition is performed in an RF-heate
โฆ LIBER โฆ
The growth of silicon in horizontal reactors
โ Scribed by P.C. Rundle
- Publisher
- Elsevier Science
- Year
- 1971
- Tongue
- English
- Weight
- 418 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
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