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MOCVD of GaAs in a horizontal reactor: modeling and growth

✍ Scribed by Linda R. Black; Ivan O. Clark; Bradley A. Fox; William A. Jesser


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
361 KB
Volume
109
Category
Article
ISSN
0022-0248

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## Abstract A novel large scale MOCVD reactor was designed through the use of models of different complexity and addressing the growth process at different length scales (multi‐hierarchy and multi‐scale approach). Particular care was taken in designing the gas distribution over the whole susceptor