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A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor

✍ Scribed by G.S. Tompa; M.A. McKee; C. Beckham; P.A. Zawadzki; J.M. Colabella; P.D. Reinert; K. Capuder; R.A. Stall; P.E. Norris

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Growth of highly uniform, reproducible I

✍ M.A. McKee; P.E. Norris; R.A. Stall; G.S. Tompa; C.S. Chern; D. Noh; S.S. Kang; 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 364 KB

Uniform growth of InSb on GaAs in a rota

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MOVPE growth of II–VI compounds in a ver

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Metalorganic chemical vapor deposition g

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Design and operating characteristics of

✍ G.S. Tompa; P.A. Zawadzki; K. Moy; M. McKee; A.G. Thompson; A.I. Gurary; E. Wola 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 660 KB