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Growth and Doping Modeling of SiC-CVD in a Horizontal Hot-Wall Reactor

✍ Scribed by S. Nishizawa; M. Pons

Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 300 KB
Volume: 12
Category: Article
ISSN: 0948-1907
DOI: 10.1002/cvde.200606469

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