𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth of SiC by “Hot-Wall” CVD and HTCVD

✍ Scribed by O. Kordina; C. Hallin; A. Henry; J. P. Bergman; I. Ivanov; A. Ellison; N. T. Son; E. Janzén

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
361 KB
Volume
202
Category
Article
ISSN
0370-1972

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Horizontal hot wall reactor design for e
Horizontal hot wall reactor design for epi-SiC growth
✍ A. Veneroni; F. Omarini; M. Masi; S. Leone; M. Mauceri; G. Pistone; G. Abbondanz 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 200 KB

## Abstract The model adopted for the simulation of a new industrial size type of horizontal cold wall reactor for epitaxial silicon carbide deposition is reviewed. The attention is focalized on the chemical mechanism adopted and on the comparison with some growth rate data and temperature profiles

Growth of crystalline SiC films by triod
Growth of crystalline SiC films by triode plasma CVD using an organosilicon compound
✍ Kanji Yasui; Masahide Kimura; Tadashi Akahane 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 339 KB 👁 1 views

In this study, dimethylchlorosilane diluted by hydrogen is used as the raw material, and silicon carbide crystals are grown on a silicon substrate at low temperature (< 500 °C) by the triode plasma CVD method. The plasma parameters, such as the electron temperature and the space potential in the spa