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The field emission of indium-doped ZnO films fabricated by room temperature DC magnetron sputtering

✍ Scribed by Fan Ye; Xing-Min Cai; Fu-Ping Dai; Dong-Ping Zhang; Ping Fan; Li-Jun Liu

Book ID
113849701
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
485 KB
Volume
407
Category
Article
ISSN
0921-4526

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Room temperature DC magnetron sputtering
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## Abstract Al doped ZnO films were prepared by reactive direct current (DC) magnetron sputtering at room temperature. The targets were metallic Al and Zn while the gases were Ar and O~2~. X‐ray diffraction (XRD) shows that the films are of hexagonal structure and Al is successfully doped into ZnO