Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si have been investigated. Compressive stress induced by backside SiO 2 film on the silicon substrate was found to retard significantly the formation of Ni 2 Si, NiSi and NiSi 2 on (0 0 1)Si. On the other ha
β¦ LIBER β¦
The effects of Ta on the formation of Ni-silicide in Ni0.95xTax0.05/Si systems
β Scribed by Dongwon Lee; Kihoon Do; Dae-Hong Ko; Siyoung Choi; Ja-Hum Ku; Cheol-Woong Yang
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 265 KB
- Volume
- 114-115
- Category
- Article
- ISSN
- 0921-5107
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