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The effects of silicon on the properties of tantalum

✍ Scribed by K. D. Moser; T. K. Chatterjee; P. Kumar

Book ID
113007803
Publisher
The Minerals, Metals & Materials Society
Year
1989
Tongue
English
Weight
911 KB
Volume
41
Category
Article
ISSN
1047-4838

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πŸ“œ SIMILAR VOLUMES

Effect of a silicon nitride buffer layer
Effect of a silicon nitride buffer layer on the electrical properties of tantalum pentoxide films
✍ B.Y. Wang; Hao Wang; C. Ye; Y. Wang; Y. Ye; W.F. Wang πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 495 KB

Ta 2 O 5 films with a buffer layer of silicon nitride of various thicknesses were deposited on Si substrate by reactive sputtering and submitted to annealing at 700 Β°C in nitrogen atmosphere. The microstructure and the electrical properties of thin films were studied. It was found that with a buffer