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The effects of silicon nitride and silicon oxynitride intermediate layers on the properties of tantalum pentoxide films on silicon: X-ray photoelectron spectroscopy, X-ray reflectivity and capacitance–voltage studies

✍ Scribed by M. Passacantando; F. Jolly; L. Lozzi; V. Salerni; P. Picozzi; S. Santucci; C. Corsi; D. Zintu


Book ID
117984955
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
272 KB
Volume
322
Category
Article
ISSN
0022-3093

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