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The effects of plasma etching induced gate oxide degradation on MOSFET's 1/f noise

โœ Scribed by Chun Hu; Ji Zhao; G. Li; P. Liu; E. Worley; J. White; R. Kjar


Book ID
126693537
Publisher
IEEE
Year
1995
Tongue
English
Weight
315 KB
Volume
16
Category
Article
ISSN
0741-3106

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