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Quantum effects on the extraction of MOS oxide traps by 1/f noise measurements

โœ Scribed by Pacelli, A.; Villa, S.; Lacaita, A.L.; Perron, L.M.


Book ID
114537723
Publisher
IEEE
Year
1999
Tongue
English
Weight
221 KB
Volume
46
Category
Article
ISSN
0018-9383

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A characterization of traps in ultrathin-oxide MOSFETs by low frequency noise measurements is presented. Drain and gate current noise measurements are investigated. 1/f drain noise magnitude allows extraction of slow oxide interface trap density. Random Telegraph Signal (R.T.S.) gate noise allows to