Oxide traps characterization of 45 nm MO
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F. Martinez; C. Leyris; G. Neau; M. Valenza; A. Hoffmann; J.C. Vildeuil; E. Vinc
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Article
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2005
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Elsevier Science
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English
โ 247 KB
A characterization of traps in ultrathin-oxide MOSFETs by low frequency noise measurements is presented. Drain and gate current noise measurements are investigated. 1/f drain noise magnitude allows extraction of slow oxide interface trap density. Random Telegraph Signal (R.T.S.) gate noise allows to