✦ LIBER ✦
Comment, on "A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon" [with reply]
✍ Scribed by Surya, C.; Hsiang, T.Y.; Gross, B.J.; Jayaraman, R.; Sodini, C.G.
- Book ID
- 114535023
- Publisher
- IEEE
- Year
- 1993
- Tongue
- English
- Weight
- 227 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0018-9383
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