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The effects of oxygen annealing on the electrical characteristics of hydrothermally grown zinc oxide thin-film transistors

✍ Scribed by Wang, Jyh-Liang; Yang, Po-Yu; Hsieh, Tsang-Yen; Hwang, Chuan-Chou; Shye, Der-Chi; Lee, I-Che

Book ID
119373455
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
560 KB
Volume
77
Category
Article
ISSN
0038-1101

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## Abstract The thermal activation effects on the stoichiometry of indium zinc oxide (IZO) thin‐film transistors (TFTs) deposited by radio frequency magnetron sputtering process under different oxygen pressure, were investigated as a function of annealing temperature and environment conditions. The