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Effects of vapor-annealed gate dielectric on the properties of zinc tin oxide transparent thin film transistors

✍ Scribed by Hee Choi, Mu; Young Ma, Tae

Book ID: 123535795
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 367 KB
Volume: 16
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2012.09.009

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