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Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing

✍ Scribed by C.J. Chiu; Z.W. Pei; S.T. Chang; S.P. Chang; S.J. Chang

Book ID: 113940825
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 337 KB
Volume: 86
Category: Article
ISSN: 0042-207X
DOI: 10.1016/j.vacuum.2011.06.014

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## Abstract Transparent thin films of amorphous zinc indium tin oxide were prepared at room temperature by co‐sputtering of zinc oxide and indium tin oxide. Effect of oxygen partial pressure on the optical and electrical properties of amorphous zinc indium tin oxide thin films were investigated. Co