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The effects of C3H8 on the chemical vapor deposition of silicon carbide in the CH3SiCl3 + H2 system

✍ Scribed by Byung Jin Choi; Sun Ho Jeun; Dai Ryong Kim

Book ID
108032839
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
889 KB
Volume
9
Category
Article
ISSN
0955-2219

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## Abstract Epitaxial growth of GaAs has been achieved on CaF~2~, α‐Al~2~O~3~ and spinel substrates. X‐ray investigations showed well defined relations between layer perfection and the quality of substrate material. The formation of epitaxial layers in pyrolytic deposition processes is discussed in