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The effect of the polishing pad treatments on the chemical-mechanical polishing of SiO2 films

✍ Scribed by Weidan Li; Dong Wook Shin; Minoru Tomozawa; Shyam P. Murarka


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
648 KB
Volume
270
Category
Article
ISSN
0040-6090

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## On the Mechanism of Chemical Polishing of GaAs Crystals In order to establish reproducible conditions for chemical lap polishing of GaAs with NaOCl solutions, containing also OH-and CO:--ions, the mechanism of dissolution was investigated using the rotating disk arrangement. I n solutions with