There is a significant and unexplained drop in the band-gap pressure coefficients of III-V ternary semiconductor alloys grown as strained layers compared with the bulk binary values. For example, the drop for In x Ga 1รx As is about รฐ50xร meV/GPa. In the past, first order effects of pressure have be
The effect of the laplace pressure on the band gap of ultrasmall semiconductor particles
โ Scribed by Franz Grieser; German Mills; Dan Meisel
- Book ID
- 107787783
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 166 KB
- Volume
- 120
- Category
- Article
- ISSN
- 0021-9797
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
## Abstract The band structure of GaP and GaSb is computed by the empirical pseudopotential method (EPM) including a nonlocal correction. The pressure dependence of the energy gaps and the wave functions are then calculated for these materials.
## Abstract In Phillips' spectroscopic theory of semiconductors, the covalency and ionicity are derived empirically from the average band gap between the highest valence and lowest conduction bands. In this paper an explicit expression for the average band gap is derived based on a continued fracti