Thin graded hetero-epitaxial AlGaAs layer has been grown from the undersaturated Liquid Phase Epitaxial (LPE) technique. The grown layers have been characterized using Laser Raman scattering studies. The peak position and intensity ratio of GaAs and AlAs like LO phonon frequencies have been measured
โฆ LIBER โฆ
On the Photoelectric Properties of Thin Graded-Band-Gap Semiconductor Layers
โ Scribed by Sokolovskii, B. S.
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 247 KB
- Volume
- 161
- Category
- Article
- ISSN
- 0031-8965
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