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The band gap pressure coefficient of CuInTe2

โœ Scribed by I.-H. Choi; P.Y. Yu


Book ID
108356487
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
101 KB
Volume
62
Category
Article
ISSN
0022-3697

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There is a significant and unexplained drop in the band-gap pressure coefficients of III-V ternary semiconductor alloys grown as strained layers compared with the bulk binary values. For example, the drop for In x Ga 1ร€x As is about รฐ50xรž meV/GPa. In the past, first order effects of pressure have be