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Pressure coefficients for band gaps in silicon

โœ Scribed by Carmen Varea de Alvarez; Marvin L. Cohen


Publisher
Elsevier Science
Year
1974
Tongue
English
Weight
316 KB
Volume
14
Category
Article
ISSN
0038-1098

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There is a significant and unexplained drop in the band-gap pressure coefficients of III-V ternary semiconductor alloys grown as strained layers compared with the bulk binary values. For example, the drop for In x Ga 1ร€x As is about รฐ50xรž meV/GPa. In the past, first order effects of pressure have be