Pressure coefficients for band gaps in silicon
โ Scribed by Carmen Varea de Alvarez; Marvin L. Cohen
- Publisher
- Elsevier Science
- Year
- 1974
- Tongue
- English
- Weight
- 316 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
We have calculated the band structures of M 8 Si 38 Ga 8 M: Na, K, Rb, and Cs using the density-functional theory with the generalized gradient corrected local density approximation. They are indirect semiconductors with the calculated gaps from 0.45 to 0.89 eV, the gaps becoming wider with the prom
There is a significant and unexplained drop in the band-gap pressure coefficients of III-V ternary semiconductor alloys grown as strained layers compared with the bulk binary values. For example, the drop for In x Ga 1รx As is about รฐ50xร meV/GPa. In the past, first order effects of pressure have be