๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Pressure coefficients of band gaps in semiconductors

โœ Scribed by K.J. Chang; Sverre Froyen; Marvin L Cohen

Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
220 KB
Volume
50
Category
Article
ISSN
0038-1098

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Pressure Dependence of Band Gaps and Dee
Pressure Dependence of Band Gaps and Deep Centers in Chalcopyrite Semiconductors
โœ In-Hwan Choi; Peter Y. Yu ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 302 KB ๐Ÿ‘ 2 views

We present a review of the effect of high pressure on the electronic, optical and defect properties in chalcopyrite semiconductors with the formula IยฑIIIยฑVI 2 . We show that the linear pressure coefficients of the band gap in these materials are not constant. While the bulk moduli of this family of

Theory of the Anomalous Low Band-Gap Pre
Theory of the Anomalous Low Band-Gap Pressure Coefficients of Semiconductor Strained Layers
โœ J.R. Downes; N.W.A. van Uden; S.H.B. Bosher; M.D. Frogley; D.J. Dunstan ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 97 KB ๐Ÿ‘ 2 views

There is a significant and unexplained drop in the band-gap pressure coefficients of III-V ternary semiconductor alloys grown as strained layers compared with the bulk binary values. For example, the drop for In x Ga 1ร€x As is about รฐ50xรž meV/GPa. In the past, first order effects of pressure have be