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Microscopic theory of the average band gap of semiconductors

โœ Scribed by V. E. Van Doren; P. E. Van Camp; J. T. Devreese

Book ID
104580015
Publisher
John Wiley and Sons
Year
1980
Tongue
English
Weight
163 KB
Volume
18
Category
Article
ISSN
0020-7608

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โœฆ Synopsis

Abstract

In Phillips' spectroscopic theory of semiconductors, the covalency and ionicity are derived empirically from the average band gap between the highest valence and lowest conduction bands. In this paper an explicit expression for the average band gap is derived based on a continued fraction representation of the polarizability matrix. Results of a calculation for six covalent and polar semiconductors, using the pseudopotential model, are presented and compare favorably with experimental values.

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โœ J.R. Downes; N.W.A. van Uden; S.H.B. Bosher; M.D. Frogley; D.J. Dunstan ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 97 KB ๐Ÿ‘ 2 views

There is a significant and unexplained drop in the band-gap pressure coefficients of III-V ternary semiconductor alloys grown as strained layers compared with the bulk binary values. For example, the drop for In x Ga 1ร€x As is about รฐ50xรž meV/GPa. In the past, first order effects of pressure have be