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The effect of the hole current on the channel inversion in trench insulated gate bipolar transistors (TIGBT)

✍ Scribed by Florin Udrea; Gehan A.J. Amaratunga; Qin Huang


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
693 KB
Volume
37
Category
Article
ISSN
0038-1101

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