Comment on “A study of base built-in field effects on the steady-state current gain of heterojunction bipolar transistors”
✍ Scribed by J. McGregor
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 110 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0038-1101
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In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well
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