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The effect of oxygen partial pressure on the properties of RF-sputtered Al2O3 thin films

✍ Scribed by Chen, Ga-Lane; Sivertsen, J.M.; Judy, J.H.

Book ID
123341406
Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
591 KB
Volume
2
Category
Article
ISSN
0167-577X

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The effect of oxygen on the properties o
The effect of oxygen on the properties of transparent conducting Cu–Al–O thin films deposited by rf magnetron sputtering
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Cu-Al-O thin films were prepared by rf magnetron sputtering. By adjusting oxygen partial pressure, the effect of oxygen on optical transmission and electrical properties of the films were investigated. The films exhibit good transparency in the visible range. As oxygen partial pressure is above 30%,