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Oxygen partial pressure dependence of memory effect of sputtered nc-Al/α-Al2O3 thin films

✍ Scribed by Yibin Li; Yue Sun; Wenzhu Zhang; Yujie Ding; Xiaodong He

Book ID
116602729
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
761 KB
Volume
460
Category
Article
ISSN
0925-8388

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The influence of oxygen partial pressure and misorientation on the chemistry and bonding at interfaces between Cu and single crystalline a-Al 2 O 3 was studied by analytical electron microscopy with nanoscale resolution. The interfaces were prepared by the sessile drop technique, i.e. by melting pur