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The effect of ion-beam specimen preparation techniques on vacancy-type defects in silicon

✍ Scribed by A.S. Gandy; S.E. Donnelly; M.-F. Beaufort; V.M. Vishnyakov; J.-F. Barbot

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
206 KB
Volume
242
Category
Article
ISSN
0168-583X

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