𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The effect of deuterium and tritium on formation and annealing of vacancy-type defects in deformed nickel

✍ Scribed by Druzhkov, A. P. ;Arbuzov, V. L. ;Danilov, S. E.


Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
206 KB
Volume
205
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis


Abstract

Pure nickel and nickel loaded with deuterium or tritium were examined during deformation at 270–300 K to 3–45% and subsequent annealing up to 850 K using the measurements of the electrical resistivity and positron annihilation spectroscopy. Three‐dimensional vacancy clusters were formed during deformation in nickel loaded with the hydrogen isotopes unlike in pure nickel. Vacancy clusters decorated with deuterium or tritium atoms created at room temperature, i.e. below a temperature at which monovacancies, are mobile in nickel. Vacancy clusters decorated with deuterium atoms have two types of atomic configurations or degrees of decoration with the binding energy of 0.73 eV and 1.05 eV, respectively. Only one configuration having the binding energy of 1.05 eV was detected for vacancy clusters decorated with tritium atoms. Possible reasons for different behaviors of vacancy clusters in T‐ and D‐loaded nickel are also discussed. (Β© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


πŸ“œ SIMILAR VOLUMES


Annealing effect on the electrical activ
✍ Feklisova, O. V. ;Pichaud, B. ;Yakimov, E. B. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 159 KB

## Abstract It is shown that after plastic deformation in clean conditions the most efficient recombination defects in Si are dislocation trails. The DLTS spectrum associated with the defects in the dislocation trails in p‐Si are revealed. The thermal annealing effect on the electrical properties o