๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

The effect of annealing on the dislocation dissociation in plasticially deformed silicon

โœ Scribed by Aristov, V. V. ;Zolotukhin, M. N. ;Kveder, V. V. ;Osipyan, Yu. A. ;Snighireva, I. I. ;Khodos, I. I.

Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
1023 KB
Volume
76
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Annealing effect on the electrical activ
Annealing effect on the electrical activity of extended defects in plastically deformed p-Si with low dislocation density
โœ Feklisova, O. V. ;Pichaud, B. ;Yakimov, E. B. ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 159 KB

## Abstract It is shown that after plastic deformation in clean conditions the most efficient recombination defects in Si are dislocation trails. The DLTS spectrum associated with the defects in the dislocation trails in pโ€Si are revealed. The thermal annealing effect on the electrical properties o

The effect of pressure on the annealing
The effect of pressure on the annealing of dislocation loops in aluminium
โœ D.I.R Norris ๐Ÿ“‚ Article ๐Ÿ“… 1966 ๐Ÿ› Elsevier Science โš– 732 KB

Thin foils of quenched aluminium have been annealed at hydrostatic pressures up to 60 kb and temperatures up to 289ยฐC. Observation by transmission electron microscopy before and after treatment has enabled a determination of temperature ranges within which dislocation loops anneal out at different p